Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1992-08-07
1996-01-02
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 36, 505190, H01L 3922
Patent
active
054811198
ABSTRACT:
A superconducting element includes a superconducting thin film bridge extending along the surface of a substrate, and a control electrode member for injecting quasi particles into a portion of an intersection region of the superconducting thin film bridge. The intersection region extends across the superconducting thin film bridge in a direction which is perpendicular to the current flow direction of the superconducting thin film bridge. A remaining portion of the intersection region, which is not injected with quasi particles by the control electrode member, operates as a weak-coupling bridge to thereby control the current flow within the superconducting thin film bridge.
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Higashino Hidetaka
Mizuno Koichi
Setsune Kentaro
Bowers Courtney A.
Crane Sara W.
Matsushita Electric - Industrial Co., Ltd.
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