Superconducting transistor

Details Superconducting transistor Superconducting transistor

1977-11-07

1979-06-05

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 5, 307306, 307212, H01L 4902

Patent

active

041575555

ABSTRACT:
A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.

REFERENCES:
patent: 3116427 (1963-12-01), Giaever
patent: 3155886 (1964-11-01), Pankove
patent: 3204115 (1965-08-01), Parmenter
patent: 3275095 (1966-09-01), Pollack
patent: 3372315 (1968-03-01), Hartman
patent: 3447043 (1969-05-01), Wallace

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