Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-11-10
1992-05-05
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505703, 505704, 428688, 428930, 428700, B32B 900
Patent
active
051107902
ABSTRACT:
A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.
REFERENCES:
Epitaxial SC Thin Films of YBa.sub.2 Cu.sub.3 O.sub.7-8 on Potassium Tantalate Single Crystals, Feenstra et al, Appl. Phys. Letters 54(11), 1063-5, 1989, CA 110(22):203867a.
Nondestructive Measurement of Microwave Quanta Energy Using Reactive Nonlinearities, Brasinskii et al, CA 97(12):100827w, 1982.
Very Low-Temperature Search for Supercondutivity in Semiconducting Potassium Tantalate (KTaO.sub.3), 1982, CA 97(10):83463e.
Boatner Lynn A.
Feenstra Roeland
Adams Harold W.
Griffin J. Donald
Martin Marietta Energy Systems Inc.
Ryan Patrick J.
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