Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Substrate for supporting superconductor
Patent
1994-12-23
1997-06-03
Ryan, Patrick
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Substrate for supporting superconductor
505237, 505701, 428930, 428688, 428701, B32B 900
Patent
active
056354533
ABSTRACT:
A superconducting thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. A high temperature superconducting layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.
REFERENCES:
patent: 5055445 (1991-10-01), Belt
patent: 5057484 (1991-10-01), Shiota
patent: 5077270 (1991-12-01), Takeda
patent: 5159413 (1992-10-01), Calviello
patent: 5229360 (1993-07-01), Shiga
patent: 5302559 (1994-04-01), Mateika
patent: 5418215 (1995-05-01), Tauber
Engineers Guide to High Tc Superconductors, Doss (1989) Wiley & Sons pp. 267-268.
Harshavardhan Kolagani S.
Pique Alberto
Venkatesan Thirumalai
Jewik Patrick
Klein David I.
Neocera, Inc.
Rosenberg Morton J.
Ryan Patrick
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