Superconducting thin film and wire on a smooth substrate

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505701, 505704, 428688, 428930, B32B 900

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active

052525430

ABSTRACT:
Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.

REFERENCES:
patent: 5028583 (1991-07-01), Tanaka
Itozaki, H., et al., "High T.sub.c Superconducting Thin Films Prepared by Sputtering", Physica C. Superconductivity, vol. 153-155, Part II, Jun. 1988.
Koinuma, H., et al., Journal of Applied Physics, vol. 62, No. 4, Aug. 15, 1987.
Hirochi, K., et al., Japanese Journal of Applied Physics, Part 2, Letters, vol. 26, No. 11, Nov. 1987.
McCallum, R. W., et al., Advanced Ceramic Materials--Ceramic Superconductors, vol. 2, No. 3B, Jul. 1987.
Journal Less-Common Metals, vol. 151, May 15, 1989, pp. 303 ff, Dubreuil et al.
Jap. Journal Appl. Physics, vol. 26, (1987), Supplement 26(3), Chaudhari, pp. 2023 ff.
Jap. AN 89-002869, Sanyo Electric K.K.

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