Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1995-06-06
1997-06-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 505237, 505238, 505239, H01L 2906, H01L 3922
Patent
active
056357303
ABSTRACT:
A superconducting oxide thin film device is composed of a LaAlO.sub.3 substrate and a YBCO thin film with a BaCeO.sub.3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the buffer layer. The buffer layer also inhibits peeling of the film from the substrate and diffusion of Ba from the film into the substrate.
REFERENCES:
patent: 4797593 (1989-01-01), Saito et al.
Hsieh et al., "Microstructure of epitaxial YBaCuO thin films grown on LaAIO3 (001)," Appl. Phys. Lett., vol. 57, No. 21, 19 Nov., 1990, pp. 2268-2270.
Muller et al., "Critical Phenomena near structure phase transistions studied by EPR," Ferroelectrics, vol. 7, 1974, pp. 17-21.
Wiener-Avnear et al., "In situ laser deposition of YBaCuO high Tc superconducting thin films with SrTiO3 underlayers," Appl. Phys. Lett., vol. 56, No. 18, 30 Apr. 1990, pp. 1802-1804.
Advanced Mobile Telecommunication Technology Inc.
Crane Sara W.
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