Superconducting multilayer interconnection formed of a-axis and

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Superconductor next to superconductor

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505220, 505703, 257661, 257662, H01L 3906, H01L 3908, H01L 3912

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054300126

ABSTRACT:
A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other. In the superconducting multilayer interconnection, at least one of the first and second superconducting current paths has a step portion and the superconducting interconnect current path is positioned at the step portion so that the interface area between the superconducting current path and the superconducting interconnect current path is enlarged.

REFERENCES:
patent: 4660061 (1987-04-01), Sweeny et al.
patent: 4689559 (1987-08-01), Hastings et al.
patent: 5021867 (1991-06-01), Przybysz
Applied Physics Letters, vol. 59, No. 6, 5 Aug. 1991, pp. 733-735, K. Char et al. "Bi-epitaxial Grain Boundary Junctions in YBa2Cu307".

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