Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1992-03-30
1993-08-24
Dang, Thi
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505725, 505728, 505742, 156655, 156656, 1566591, 156667, 20419234, H01L 3900
Patent
active
052389138
ABSTRACT:
Superconducting microcircuits including a thin layer of Ba.sub.2 Cu.sub.3 O.sub.5+x (0<x<1) on a substrate. A thin layer of a dopant; for example, Y.sub.2 O.sub.3 for superconducting patterns of YBa.sub.2 Cu.sub.3 O.sub.7-x, or Pr.sub.2 O.sub.3 for insulator patterns of PrBa.sub.2 Cu.sub.3 O.sub.7-x. These layers are covered with a layer of photoresist, which is exposed to light through a mask having a pattern for a desired circuit. The photoresist is then developed to reveal a pattern of the thin dopant layer which will be etched away. The microcircuit is then etched and stripped to remove the unneeded portion of the thin dopant layer. Finally, the microcircuit is heated at a temperature and for a period of time sufficient to diffuse and react the dopant layer with the thin layer of Ba.sub.2 Cu.sub.3 O.sub.5+x, forming a pattern of superconductor or insulator.
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Dang Thi
Gaetjens Paul D.
Moser William R.
The United States of America as represented by the United States
Wyrick Milton D.
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