Superconducting layer in contact with group III-V semiconductor

Details Superconducting layer in contact with group III-V semiconductor Superconducting layer in contact with group III-V semiconductor

1996-02-14

1998-06-02

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Superconductive contact or lead

Transmission line or shielded

257663, 257 37, 505230, 505856, 505866, 505470, 505220, 505235, 505236, 505237, 505813, 505703, 505704, H01L 3900, H01L 2906, H04B 100, H01P 100

Patent

active

057604630

ABSTRACT:
A superconductor device which includes a first wiring part and a second wiring part which together form a superconductive wiring. The first wiring part is arranged onto a substrate and is made of a superconductor material. The second wiring part is made of a non-oxide semiconductor material. The second wiring part is adjacent to the first wiring part and jointly forms a superconductive wiring with the first wiring part by becoming at least partly superconductive due to proximity effect with the first wiring part. The second wiring part has a smaller penetration length of magnetic field than that for the first wiring part. This structure enhances the propagation velocity of a signal within the superconductive wiring.

REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 5024993 (1991-06-01), Kroger et al.
patent: 5256897 (1993-10-01), Hsegawa et al.
patent: 5380704 (1995-01-01), Tarutani et al.
Matsuda et al., "Fabrication of NbN Josephson Tunnel Junctions and Their application to DC-Squids", Japanese Journal of Applied Physics vol. 25, No. 8, Aug. 1986, pp. 1188-1191.
Gijs et al., "yBa.sub.2 Cu.sub.3 O.sub.7-8 -Ag-Al/Al.sub.2 O.sub.3 /Pb Tunnel Junctions Based on the Superconducting Proximity Effect," Applied Physics Letters, vol. 57, No. 24, Dec. 10, 1990, pp. 2600-2602.

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