Superconducting junctions utilizing a binary semiconductor barri

Details Superconducting junctions utilizing a binary semiconductor barri Superconducting junctions utilizing a binary semiconductor barri

1978-03-20

1979-03-20

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 4, 307212, 307306, H01L 3922

Patent

active

041456998

ABSTRACT:
Superconductor junctions adaptable for applications such as logic circuitry and magnetic flux detection are disclosed. These junctions utilize superconducting electrodes with a semiconductor barrier composed of a binary composition of germanium and tin. The composition of this binary composition strongly affects the electrical properties of the device. For example, when using two Sn electrodes, if the Sn/Ge ratio in the barrier is changed from 1:4 to 1:1 for a thickness of 600 A, the electrical properties of the junction transform from hysteretic to non-hysteretic characteristics.

REFERENCES:
patent: 3697826 (1972-10-01), Mitani
patent: 3702956 (1972-11-01), Renard et al.
patent: 3751721 (1971-12-01), Fulton
patent: 3816173 (1974-06-01), Eldridge
Jutzi, I.B.M. Tech. Discl. Bull., vol. 16, No. 6, Nov. 1973, p. 2020.

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