Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Substrate for supporting superconductor
Patent
1997-01-31
2000-06-13
Yamnitzky, Marie
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Substrate for supporting superconductor
505237, 505238, 505470, 505474, 505701, 505729, 428700, 428701, 428930, H01L 3902, B05D 512
Patent
active
060749903
ABSTRACT:
A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. The HTSC layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) in parallel aligned orientation and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.
REFERENCES:
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patent: 5229360 (1993-07-01), Shiga et al.
patent: 5418215 (1995-05-01), Tauber et al.
patent: 5635453 (1997-06-01), Pique et al.
patent: 5691279 (1997-11-01), Tauber et al.
Harshavardhan Kolagani S.
Pique Alberto
Venkatesan Thirumalai
Neocera, Inc.
Yamnitzky Marie
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