Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Superconductor next to two or more nonsuperconductive layers
Patent
1994-08-01
1995-05-30
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Superconductor next to two or more nonsuperconductive layers
505239, 505238, 428688, 428689, 428700, 428930, B32B 900
Patent
active
054201020
ABSTRACT:
A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.
REFERENCES:
patent: 4810318 (1989-03-01), Haisma
patent: 5159413 (1992-10-01), Caviello et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5252551 (1993-10-01), Wu et al.
Sahu et al. "Overview of High T. Superconductivity," ACS, 1988 in Chemistry of High T Superconductors II chapter 1.
Tanimura et al., Jap Journ. of App. Phys. vol. 32 (1993) Feb. 15, 1993, L254-L256.
Wang et al., Appl. Phys. Lett. 59(12) Sep. 16, 1991, pp. 1509-1511.
Grant et al., Physica C 185-189 (1991) pp. 2099-2100.
"Cuprate Superconductors, Record 133 K Achieved with Mercury", C&EN, May 10, 1993, pp. 4-5.
Gebelle, Science, vol. 259, Mar. 12, 1993 pp. 1550-1551.
"Epitaxial MgO on GaAs(111) as a Buffer Layer for Z-Cut Epitaxial Lithium Niobate", Appl. Phys. Lett. 63(8), Aug. 23, 1993, pp.1029-1031, D. K. Fork, et al.
"Low-Temperature Growth of MgO by Molecular-Beam Epitaxy", The American Physical Society, Physical Review B, vol. 41, No. 11, Apr. 15, 1990, pp. 7961-7963, S. Yadavalli, et al.
"Reproductible Growth of High Quality YBa.sub.2 Cu.sub.3 O.sub.7-x Film on (100) MgO with a SrTiO.sub.3 Buffer Layer by Pulsed Laser Deposition", APL 60 (25), Jun. 22, 1992, 3 pp., Jeffrey T. Cheung, et al.
"Large-Area YBa.sub.2 Cu.sub.3 O.sub.7-.delta. Thin Films on Sapphire for Microwave Applications", Appl. Phys. Lett. 61(14), Oct. 5, 1992, pp. 1727-1729, B. F. Cole, et al.
"Epitaxial MgO on Si(001) for Y-Ba-Cu-O Thin-Film Growth by Pulsed Laser Deposition", Appl. Phys. Lett. 58 (20), May 20, 1991, pp. 2294-2296, D. K. Fork, et al.
"High Misfit Epitaxial Growth: Superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films on (100) BaF.sub.2 Substrates", Appl. Phys. Lett. 59 (12), Sep. 16, 1991, pp. 1509-1511, S. Z. Wang, et al.
"Application of a Near Coincidence Site Lattice Theory to the Orientations of YBa.sub.2 Cu.sub.3 O.sub.7-x Grains on (001) MgO Substrates", Appl. Phys. Lett. 57 (16), Oct. 15, 1990, D. M. Hwang, et al.
"Defect Structure of Laser Deposited Y-Ba-Cu-O Thin Films on Single Crystal MgO Substrate", J. Mater. Res., vol. 5, No.4, Apr., 1990, pp. 704-716, R. Ramesh, et al.
"Interactions of YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films with Alkaline Earth Fluoride Substrates", J. Appl. Phys. 74 (5), Sep. 1, 1993, pp. 3194-3203, C. H. Peters, et al.
"Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x Thin Films Grown on Sapphire with Epitaxial MgO Buffer Layers", Appl. Phys. Lett. 57 (1), Jul. 2, 1990, pp. 90-92, A. B. Berezin, et al.
"YBCO Thin Films on Sapphire with an Epitaxial MgO Buffer", 1991 IEEE, pp.970-973, A. B. Berezin, et al.
"Epitaxial Growth of YBa.sub.2 Cu.sub.3 O.sub.7 Films on GaAs with MgO Buffer Layers", Appl. Phys. Lett. 61 (15), Oct. 12, 1992, pp. 1841-1842, W. Prusseit, et al.
"Epitaxial Growth of MgO on GaAs (001) for Growing Epitaxial BaTiO.sub.3 Thin Films by Pulsed Laser Deposition", Appl. Phys. Lett. 60 (10), Mar. 9, 1992, pp. 1199-1201, Keiichi Nashimoto, et al.
Double Heterostructure GaAs/AlGaAs Thin Film Diode Lasers on Glass Substrates, E. Yablonovitch, E. Kapon, T. J. Gmitter, C. P. Yun, R. Bhat Reprinted from IEEE Photonics Technology Letters vol. 1, No.2, Feb. 1989.
Grafted GaAs Detetors on Lithium Niobate and Glass Optical Waveguides, A. Yi-Yan, W. K. Chan, T. J. Gmitter, L. T. Florez, J. L. Jackel, E. Yablonovitch, R. Bhat, J. P. Harbison, Reprinted from IEEE Photonics Technology Letters, vol. 1, No. 11, Nov. 1989.
Regrowth of GaAs Quantum Wells on GaAs Liftoff Films `Van Der Waals Bonded to Silicon Substrates, E. Yablonovitch, K. Kash, T. J. Gmitter L. T. Florez, J. P. Harbison, E. Colas, Bellcore Navesink Research Center, Red Bank, N.J. 07701-7020, USA.
Epitaxial CaF.sub.2 on GaAs (100 After Ambient Transfer with Arsenic Overlayer S. Sinharoy, Y. F. Lin, and J. H. Rieger, Westinghouse Research and Develop-Center, Pittsburg, Penna. 15235 (Received 8 Sep. 1986; accepted for publication 21 Oct. 1986).
Molecular Beam Epitaxial Growth of High Structural perfection CdTe on Si Using A (Ca, Ba)F.sub.2 Buffer Layer, H. Zogg and S. Blunier, Swiss Federal Institute of Technology and AFIF-Ch-8093 Zurich, Switzerland (Received 2 Sep. 1986; accepted for publication 3 Oct. 1986).
A GaAs Misfet Using An MBE-Grown CaF.sub.2 Gate Insulator Layer, Takao Waho and Fumihiko Yanagawa, Member IEEE.
Summary Abstrct: Growth of Epitaxial GaAs/Fluoride/GaAs (001) Structures P. W. Sullivan and J. E. Bower, Arthur D. Little, Inc. Cambridge, Mass. 02140 G. M. Metze, MIT Lincoln Lab., Lexington, Mass. 02173-0073 (Received 15 Sep. 1984; accepted 15 Oct. 1984).
Epitaxial Growth of Lanthanide Trifluorides by MBE, S. Sinharoy, R. A. Hoffman, J. H. Rieger, W. J. Takei, and R. F. C. Farow, Westinghouse R&D Center, Pittsburgh, Penna. 15235 (Received 15 Sep. 1984; accepted 15 Oct. 1984).
MBE-Grown Fluoride Films: A New Class of Epitaxial Dielectrics, R. F. C. Farrow, P. W. Sullivan, G. M. Williams, G. R. Jones, and D. C. Cameron, Royal Signals and Radar Establishment, St. Andrews Road, Malvern Worcs WR14 3PS UK (Received 27 Feb. 1981; accepted 18 May 1981).
Extreme Selectivity in the Lift-Off of Epitaxial GaAs Films, Eli Yablonovitch, T. Gmitter, J. P. Harbison and R. Bhat, Bell Communication Research, Navesink Research Center, Red Bank, N.J. 07701-7020 (Received 8 Sep. 1987; accepted for publication 21 Oct. 1987).
Van Der Waals Bonding of GaAs Epitaxial Liftoff Films Onto Arbitrary Substrates, E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez and J. P. Harbison, Bell Communication Research, Navesink Research Center, Red Bank, N.J. 07701-7040 (Received 1 Dec. 1989; accepted for publication Red Bank, N.J. 07701-7040 (Received 1 Dec. 1989; accepted for publication 13 Apr.1990).
Feasibility of the High T.sub.c Superconducting Bolometer, P. L. Richards, J. Clarke, R. Leoni, Ph. Lerch and S. Vergheses, Dept. of Physics, Univ. of California, M. R. Beasley, T. H. Geballe, R. H. Hammond, P. Rosenthal, and S. R. Spielman, Dept. of Applied Physics, Stanford Univ. (Received 17 Oct. 1988; accepted for publication 15 Nov. 1988).
Harshavardhan Kolagani S.
Venkatesan Thirumalai
Jewik Patrick R.
Klein David I.
Neocera, Inc.
Rosenberg Morton J.
Ryan Patrick J.
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