Superconducting field-effect transistors with inverted MISFET st

Details Superconducting field-effect transistors with inverted MISFET st Superconducting field-effect transistors with inverted MISFET st

1993-11-19

1994-12-27

Hearn, Brian E.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Semiconductor device or thin film electric solid-state...

437 41, 437 42, 437 40, 505701, H01C 21265

Patent

active

053765699

ABSTRACT:
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).
The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0.ltoreq..delta..ltoreq.0.5.

REFERENCES:
patent: 4994435 (1991-02-01), Shiga et al.
patent: 5106822 (1992-01-01), Tamura
patent: 5130294 (1992-07-01), Char
patent: 5132282 (1992-07-01), Newman et al.
patent: 5155094 (1992-10-01), Okabe et al.
patent: 5221660 (1993-06-01), Itozaki et al.

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