Superconducting field effect transistor

Details Superconducting field effect transistor Superconducting field effect transistor

1991-08-16

1993-07-27

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 36, 257 39, 505 1, 505701, 505832, 505817, H01L 3922, H01B 1200

Patent

active

052312950

ABSTRACT:
A field-effect transistor comprises, on a substrate, a layer of semiconductor material incorporating natural or artificial inclusions of superconducting material. The source, drain and gate electrodes are made on this layer. Applications: field-effect transistors with low gate control voltage. FIG. 3.

REFERENCES:
patent: 4950643 (1990-08-01), Agostinelli et al.
patent: 5059581 (1991-10-01), Vasquez
patent: 5070375 (1991-12-01), Sakai
Takaoka et al., "Superconductivity of (Pb, Sn, Ge) Te Semiconductor Film with a Little Pb Inclusion", Jap. J. of Appl. Phys., vol. 26, (1987) Supplement 26-3.
Patent Abstracts of Japan, vol. 12, No. 44, (E-581)[2891], Feb. 9, 1988, K. Tanabe, et al., "Superconducting Three-Terminal Device"; & JP-A-62 195 189, Aug. 27, 1987.
Physical Review Letters, vol. 66, No. 23, Jun. 10, 1991, J. M. Baranowski, et al., "Evidence for Superconductivity in Low-Temperature-Grown GaAs", pp. 3079-3082.
Solid State Communications, vol. 76, No. 1, 1990, pp. 31-34, GB, T. Koshindo, et al., "Enhancement of Superconducting Transition Temperature by Photo-Carriers in Indium Doped Pb1-xSnxTe Film with Lead Inclusion".
Japanese Abstract, vol. 14, No. 28, (E-875)(3971) Jan. 19, 1990, JP-A-1-265576, Noboru Ebara, Oct. 23, 1989, "Ceramic Superconductive Transistor".

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