Superconducting field effect device with vertical channel formed

Details Superconducting field effect device with vertical channel formed Superconducting field effect device with vertical channel formed

1994-05-26

1995-10-31

Saadat, Mahshid D.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

257 38, 257 39, 257263, 505234, 505237, 505239, H01B 1200, H01L 3922, B05D 512

Patent

active

054629187

ABSTRACT:
A superconducting device has a stacked structure including a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in this given order. The stacked structure has an end surface portion extending from the first insulating layer to the second insulating layer. A fourth superconducting layer is formed to cover the end surface of the stacked structure. A third insulating layer separates the stacked structure end surface and the fourth superconducting layer. The fourth superconducting layer is electrically connected to the first and third superconducting layers but is isolated from the second superconducting layer by the third insulating layer. The first through fourth superconducting layers are formed of an oxide superconductor thin film. A silicon containing layer is formed adjacent to at least one of the first, third and fourth superconducting layers, but is not in direct contact with the other superconducting layers.

REFERENCES:
patent: 4677451 (1987-06-01), Parsons et al.
patent: 4831421 (1989-05-01), Gallagher et al.
Linker et al, "Control Of Growth Direction Of Epitaxial y-Ba-Cu-O Thin Films On SrTi-O3 Substratges", Solid State Communications, vol. 69, #3, 1989 pp. 249-253.

Affiliated with

Also associated with

Rating

Superconducting field effect device with vertical channel formed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Superconducting field effect device with vertical channel formed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superconducting field effect device with vertical channel formed will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1772244