Superconducting field effect device having a superconducting cha

Details Superconducting field effect device having a superconducting cha Superconducting field effect device having a superconducting cha

1996-04-17

1999-01-19

Yamnitzky, Marie

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

505234, 505235, 505237, 505238, 505701, 505702, 257 36, 257 39, 428210, 428697, 428699, 428701, 428702, 428930, H01L 3922

Patent

active

058613617

ABSTRACT:
A FET type superconducting device comprises a thin superconducting channel, a superconducting source region and a superconducting drain region formed of an oxide superconductor over a principal surface of the substrate, and a gate electrode on a gate insulator disposed on the superconducting channel for controlling the superconducting current flowing through the superconducting channel by a signal voltage applied to the gate electrode. The superconducting channel is formed of

REFERENCES:
patent: 5418389 (1995-05-01), Watanabe
patent: 5422336 (1995-06-01), Tsuda et al.
patent: 5422338 (1995-06-01), Watanabe
patent: 5441926 (1995-08-01), Kimura et al.
patent: 5521862 (1996-05-01), Frazier

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