Superconducting FET with Pr-Ba-Cu-O channel

Details Superconducting FET with Pr-Ba-Cu-O channel Superconducting FET with Pr-Ba-Cu-O channel

1993-09-22

1995-06-06

Saadat, Mahshid D.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

257 34, 257 36, 257 39, 505237, 505779, 427 62, 427 63, H01L 3922, H01B 1200, B05D 512

Patent

active

054223369

ABSTRACT:
A superconducting transistor with superior withstand voltage having source region and a drain region formed of oxide superconductors 3, a PrBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 or an ScBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 forming an intermediate region sandwiched by the source and drain regions. The regions are disposed on a substrate 1. An insulation layer 4 is disposed on the intermediate region. A transistor uses the intermediate region as an insulator when the gate is turned off, and as a superconductor when the gate is turned on.

REFERENCES:
patent: 5064808 (1991-11-01), Merzhanov et al.
patent: 5143895 (1992-09-01), Uchida et al.
patent: 5250506 (1993-10-01), Saitoh et al.
Superconductive Electronics, J. IEEE Japan, vol. 108, No. 10, 1988 by Hisao Hayakawa.

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