Superconducting device with c-axis channel and a-axis source and

Details Superconducting device with c-axis channel and a-axis source and Superconducting device with c-axis channel and a-axis source and

1992-12-10

1995-09-05

Saadat, Mahshid

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

257 35, 257 37, 257 39, 257213, 505234, 505237, 505239, 505703, H01B 1200, H01L 3922

Patent

active

054479070

ABSTRACT:
A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, a superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor. The non-superconducting oxide layers contact with at least the superconducting source region and the superconducting drain region. In the superconducting device, the superconducting channel, the superconducting source region and the superconducting drain region are formed of one oxide superconductor thin film of which the center portion is c-axis oriented and the both ends are a-axis oriented.

REFERENCES:
Wu et al, "High Critical Currents in Epitaxial YBa Cu O Thin Films on Silicon With Buffer Layers," Appl. Phys. Lett., vol 54, No. 8, 20 Feb. 1989, pp. 754-756.
Olsson et al, "Crack Formation in Epitaxial [110] Thin Films of Y-Ba-Ca-O and Pr-Ba-Cu-O on [110] SrTiO.sub.3 Substrate," Appl. Phys. Lett., vol. 58, No. 15, 15 Apr. 1991, pp. 1682-1684.

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