Superconducting device structures employing anisotropy of the ma

Details Superconducting device structures employing anisotropy of the ma Superconducting device structures employing anisotropy of the ma

1990-05-21

1992-03-31

Hille, Rolf

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

357 4, 505 1, 505702, 505832, 505874, H01L 3922, H01L 2712, H01B 1200, G11C 1144

Patent

active

051012430

ABSTRACT:
A high T.sub.c oxide superconductive switching device [10] formed on a substantially planar substrate [18] includes a base electrode [12] comprised of a layer or film of anisotropic superconducting material. The layer has a first crystalline axis [c] along which a magnitude of an energy gap of the material is less than an energy gap of the material along other crystalline axes. The superconductive switching device further includes at least one injector electrode [14] forming a planar [16] or an edge tunneling junction with the base electrode for injecting, under the influence of a bias potential eV, quasiparticles into the base electrode. The first crystalline axis is aligned in a predetermined manner with the tunneling junction for optimizing a quasiparticle injection efficiency of the tunneling junction.

REFERENCES:
patent: 4831421 (1989-05-01), Gallagher et al.
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"Superconducting Propeties of Aligned Crystalline Grains of Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7- " by D. E. Farrell et al., Physical Review B, vol. 36, No. 7, 1 Sep. 1987.
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"Anisotropic Nature of High-Temperature Superconductivity in Single-Crystal Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x " 7 Sep. 1987.

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