Superconducting device structure with Pr-Ba-Cu-O barrier layer

Details Superconducting device structure with Pr-Ba-Cu-O barrier layer Superconducting device structure with Pr-Ba-Cu-O barrier layer

1993-11-12

1995-08-15

Limanek, Robert P.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

257 35, 257 36, 257 39, 505234, 505237, 505238, 505239, 427 62, 427 63, H01L 3922, B05D 512, H01B 1200

Patent

active

054419263

ABSTRACT:
A superconducting transistor having a source region and a drain region are formed by a YBCO film on a barrier layer, which is composed of a PBCO film formed on an STO substrate. A gate electrode is disposed on the thinner wall at the back of the STO substrate. In a superconducting transistor so constructed the electric field created by the gate voltage works effectively at an interface with the barrier layer, more carriers can be drawn out relative to the applied gate voltage, and it becomes possible for a large superconduction current to flow.

REFERENCES:
patent: 5087605 (1992-02-01), Hegde et al.
patent: 5250506 (1993-10-01), Saitoh et al.
Mannhart et al, "Electric Field Effect on Superconducting YBaCuO Films," Z. Phys. B-Condensed Matter 83, 1991 pp. 307-311.
Superconductive Electroincs, J. IEEE Japan, vol. 108, No. 10, 1988 by Hisao Hayakawa.

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