Superconducting device having layered structure composed of oxid

Details Superconducting device having layered structure composed of oxid Superconducting device having layered structure composed of oxid

1993-12-22

1995-06-06

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 9, 257 30, 257 31, 257 32, 257 33, 257 36, 257 52, 505190, 505329, H01L 2900

Patent

active

054224977

ABSTRACT:
A superconducting device includes a first thin film of oxide superconductor material formed on a substrate, a second thin film of insulator material stacked on the first thin film of oxide superconductor material, and a third thin film of oxide superconductor material formed on the second thin film of insulator material. The second thin film of insulator material is formed of an amorphous oxide including the same constituent elements as those of the oxide superconductor material of the first thin film. The second thin film of insulator material is formed by heat-treating the first thin film of oxide superconductor material in a gaseous atmosphere bringing a surface of the oxide superconductor material into an amorphous condition, after the first thin film of oxide superconductor material has been formed on the substrate.

REFERENCES:
patent: 4490733 (1984-12-01), Kroger
patent: 4499119 (1985-02-01), Smith
patent: 4970395 (1990-11-01), Kruse, Jr.
patent: 5015623 (1991-05-01), Scholten
"Fabrication of thin-film type Josephson junctions using a Bi-Sr-Ca-Cu-O/Bi-Sr-Cu-O/Bi-Sr--Ca-Cu-O Structure" by K. Mizuno et al., Dec., 1989.
"Monolithic Device Fabrication Using High-Tc Superconductor" by Yoshida et al., p. 283, Dec. 1988.

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