Superconducting device having an extremely thin superconducting

Details Superconducting device having an extremely thin superconducting Superconducting device having an extremely thin superconducting

1991-10-08

1993-08-17

Mintel, William

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

257 34, 257 39, 427 62, 427 63, 505702, 505729, H01B 1200, H01L 3922, B05D 512

Patent

active

052368963

ABSTRACT:
A superconducting device includes a superconducting channel consituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.

REFERENCES:
patent: 4751563 (1988-06-01), Laibowitz et al.
patent: 4878094 (1989-10-01), Balkanski
Wu et al, "High Critical Currents in Epitaxial YBaCuO Thin Films on Silicon with Buffer Layers", Appl. Phys. Lett., vol. 54, #8, Feb. 20, 1989 pp. 754-756.

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