Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1994-12-29
1996-07-23
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 34, 257 35, 257 36, 505193, 505234, 505237, 505239, 427 62, 427 63, H01L 2906, H01B 1200, B05D 512
Patent
active
055392156
ABSTRACT:
A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, a first and a second superconducting regions formed of c-axis oriented oxide superconductor thin films on the non-superconducting oxide layer separated from each other and gently inclining to each other, a third superconducting region formed of an extremely thin c-axis oriented oxide superconductor thin film between the first and the second superconducting regions, which is continuous to the first and the second superconducting regions.
REFERENCES:
Wu et al. "High Critical Currents in Epitaxial Y Ba Cu O Thin Films on Silicon with Buffer Layers," Appl. Phys. Lett., vol. 54, No. 8, 20 Feb. 1989, pp. 754-756.
Olsson et al, "Crack Formation in Epitaxial [110] Thin Films Of YBaCuO And PrBaCuO on [110] SrTiO.sub.3 Substrates, " Appl. Phys. Lett., vol. 58, No. 15, 15 Apr. 1991, pp. 1682-1684.
Tarutani, Y., et al., "Superconducting Characteristics of a Planar-type HoBa.sub.2 Cu.sub.3 O.sub.7-x -La.sub.1.5 Ba.sub.1.5 Cu.sub.3 O.sub.7-y -HoBa.sub.2 Cu.sub.3 O.sub.7-x junction", Applied Physics Letters, vol. 58, No. 23, pp. 2707-2709, Jun. 10, 1991.
Moore, D. F., et al., "Superconducting Thin Films for Device Applications (Invited), 2nd Workshop on High Temperature Superconducting Electron Devices", pp. 281-284, Jun. 7-9, 1989.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Saadat Mahshid
Sumitomo Electric Industries Ltd.
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