Superconducting device having an extremely thin superconducting

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Semiconductor thin film device or thin film electric...

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257 34, 257 38, 257 39, 505234, 505238, 505239, H01L 2906, H01L 3922, H01B 1200

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055061974

ABSTRACT:
A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, a first and a second superconducting regions formed of c-axis oriented oxide superconductor thin films on the non-superconducting oxide layer separated from each other and gently inclining to each other, a third superconducting region formed of an extremely thin c-axis oriented oxide superconductor thin film between the first and the second superconducting regions, which is continuous to the first and the second superconducting regions.

REFERENCES:
Wu et al, "High Critical Currents in Epitaxial YBCO . . . ", Appl. Phys. Lett., vol. 54, No. 8, 20 Feb. 1989, pp. 754-756.
Olsson et al, "Crack Formation in Epitaxial [110] Thin Films . . . ", Appl. Phys. Lett., vol. 58, No. 15, 15 Apr., 1991, pp. 1682-1684.
Tarutani, Y., et al., "Superconducting Characteristics of a Planar-type HoBa.sub.2 Cu.sub.3 O.sub.7-x --La.sub.1.5 Ba.sub.1.5 Cu.sub.3 O.sub.7-y--HoBa.sub.2 Cu.sub.3 O.sub.7-x junction", Applied Physics Letters, vol. 58, No. 23, pp. 2707-2709, Jun. 10, 1991.
Moore, D. F., et al., "Superconducting Thin Films for Device Applications (Invited), 2nd Workshop on High Temperature Superconducting Electron Devices", pp. 281-284, Jun. 7-9, 1989.
Wu et al., "High Critical Currents In Epitaxial YBaCuO Thin Films on Silicon With Buffer Layers," Appl. Phys. Lett., vol. 54, No. 8, 20 Feb. 1989, pp. 754-756.
Olsson et al., "Crack Formation in Epitaxial [110] Thin Films of YBaCuO and PrBaCuO on [110] SrTiO.sub.3 Substrates," Appl. Phys. Lett., vol. 58, No. 15, 15 Apr. 1991, pp. 1682-1684.

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