Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1994-05-13
1995-11-28
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 257 38, 257327, 505193, 505234, 505237, 505239, 427 62, 427 63, H01L 3922, H01B 1200, B05D 512
Patent
active
054710693
ABSTRACT:
A superconducting device includes a superconducting channel constituted in an oxide superconductor the film deposited on a deposition surface of a substrate. A source electrode and a drain electrode are formed on the oxide superconductor thin film at opposite ends of the superconducting channel, so that a superconducting current can flow through be superconducting channel between the superconductor source electrode and the superconductor drain electrode. A gate electrode is formed through a gate insulator layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The gate electrode is in the form of a thin film and stands upright with respect to the gate insulator layer.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Saadat Mahshid D.
Sumitomo Electric Industries Ltd.
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