Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1993-06-24
1997-01-14
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 36, 257 38, 505193, 505234, 505237, 505239, 505480, 427 62, 427 63, H01L 3922, B05D 512, H01B 1200
Patent
active
055942571
ABSTRACT:
A superconducting device comprises a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of an oxide superconductor formed on the principal surface, which can compensates the lattice mismatch between the substrate and the oxide superconductor, a superconducting source region and a superconducting drain region formed of c-axis oriented oxide superconductor thin films on the non-superconducting oxide layer, and an insulating region formed of a doped oxide superconductor on the non-superconducting oxide layer separating the superconducting source region and the superconducting drain region between them. On the insulating region an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film is arranged. The superconducting channel electrically connects the superconducting source region to the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. A gate electrode through a gate insulating layer is disposed on the superconducting channel for controlling the superconducting current flowing through the superconducting channel by the applied gate voltage. The superconducting source region, the superconducting drain region and the insulating region have the same thickness so that the extremely thin oxide superconductor thin film which constitutes the superconducting channel is formed flatwise.
REFERENCES:
patent: 5071832 (1991-12-01), Iwamatu
patent: 5179426 (1993-01-01), Iwamatsu
patent: 5240906 (1993-08-01), Bednorz et al.
Olsson et al, "Crack Formation in Epitaxial Thin Films of Y-BA-Cu-O & PR-Ba-Cu-O on SrTiO.sub.3 Substrate", Appl. Phys. Lett. vol. 58, No. 15. 15 Apr. 1991, pp. 1682-1684.
Iiyama Michitomo
Nakamura Takao
Saadat Mahshid
Sumitomo Electric Industries Ltd.
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