Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1994-09-20
1996-03-12
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 32, 257 34, 505190, 505191, 505234, 505239, 505329, H01L 2906, H01L 3922, H01B 1200
Patent
active
054988810
ABSTRACT:
A superconducting device has a substrate and a superconducting film formed on the substrate. A surface of the substrate has a first surface portion of which a curvature is constant or changes continuously, a second surface portion of which a curvature is constant or changes continuously, and a third surface portion at which the first and second surface portions meet and at which the curvatures of the first and second surface portions become discontinuous. The superconducting film formed on the surface of said substrate has a grain boundary serving as a junction only in a portion corresponding to the third surface portion of the substrate.
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Friedl et al, "Transport Properties of Epitaxial YBaCuO Films at Step Edges," Appl. Phys. Lett., vol. 59, No. 21, 18 Nov. 1991, pp. 2751-2753.
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Neumann et al. "Physica C" vol. 210, pp. 138-146 (1993) North-Holland.
T. Mitsuzaka et al. "Physica C" vol. 218, pp. 229-237, North-Holland.
Enomoto Youichi
Fujimoto Manabu
Mitsuzuka Tsutomu
Suzuki Katsumi
Yamaguchi Keiichi
International Superconductivity Technology Ctr.
Saadat Mahshid
Sharp Kabushiki Kaisha
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