Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Semiconductor thin film device or thin film electric...
Patent
1994-02-10
1995-08-29
Crane, Sara W.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Semiconductor thin film device or thin film electric...
505234, 505235, 505239, 505701, 257 39, 257 34, 257 38, H01L 3900, H01L 3914
Patent
active
054460158
ABSTRACT:
For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode are formed on the first and second oxide superconducting regions. The superconducting device thus formed can function as a super-FET.
REFERENCES:
patent: 5057485 (1991-10-01), Nishino
patent: 5061687 (1991-10-01), Takada
Kleinsasser et al, "Three-Terminal Devices," in Superconducting Devices, Ruggier et al., eds., Academic Press, Boston: 1990. pp. 325-372 available on or before Jul. 24, 1990.
Wu, X. D., et al. "High Critical Currents in Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films on Silicon with Buffer Layers", Appl. Phys. Lett., vol. 54, No. 8, 20 Feb. 1989, pp. 754-756.
European Search Report and Annex.
D. F. Moore et al, "Superconducting Thin Films for Device Applications", Workshop on High Temperature Superconducting Electron Devices, pp. 281-184; (Jun. 7, 1989).
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Crane Sara W.
Sumitomo Electric Industries Ltd.
Tang Alice W.
LandOfFree
Superconducting device having a reduced thickness of oxide super does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Superconducting device having a reduced thickness of oxide super, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superconducting device having a reduced thickness of oxide super will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1819481