Superconducting device having a reduced thickness of oxide super

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Semiconductor thin film device or thin film electric...

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505234, 505235, 505239, 505701, 257 39, 257 34, 257 38, H01L 3900, H01L 3914

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054460158

ABSTRACT:
For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode are formed on the first and second oxide superconducting regions. The superconducting device thus formed can function as a super-FET.

REFERENCES:
patent: 5057485 (1991-10-01), Nishino
patent: 5061687 (1991-10-01), Takada
Kleinsasser et al, "Three-Terminal Devices," in Superconducting Devices, Ruggier et al., eds., Academic Press, Boston: 1990. pp. 325-372 available on or before Jul. 24, 1990.
Wu, X. D., et al. "High Critical Currents in Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films on Silicon with Buffer Layers", Appl. Phys. Lett., vol. 54, No. 8, 20 Feb. 1989, pp. 754-756.
European Search Report and Annex.
D. F. Moore et al, "Superconducting Thin Films for Device Applications", Workshop on High Temperature Superconducting Electron Devices, pp. 281-184; (Jun. 7, 1989).

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