Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1995-08-16
1997-04-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 36, 257 38, 257 39, 505193, 505235, H01L 2906
Patent
active
056212232
ABSTRACT:
A superconducting device includes first and second oxide superconducting regions of a relatively thick thickness, formed directly on a principal surface of a substrate to be separate from each other, and a third oxide superconducting region of an extremely thin thickness which is formed directly on the principal surface of the substrate so as to bridge the first and second oxide superconducting regions. A barrier layer and a diffusion source layer are formed on the third oxide superconducting region, and an isolation region is formed to cover an upper portion or both side surfaces of the diffusion source layer. The first, second and third oxide superconducting regions and the isolation region are formed of the same oxide superconductor material, and the isolation region is diffused with a material of the diffusion source layer, so that the isolation region does not show superconductivity. Therefore, a superconducting current can flow between the first and second oxide superconducting regions through only the third oxide superconducting region. For formation of the superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on the principal surface of the substrate, and a barrier layer and a diffusion source layer are formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film until the two layers are embedded in the second oxide superconductor thin film, so that a material of the diffusion source layer is diffused into the second oxide superconductor thin film on an upper portion or both side surfaces of the diffusion source layer.
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Chien et al, "Effect of Noble Metal Buffer Layers on Superconducting YBaCuO Thin Films," Appl. Phys. Lett., vol. 51, #25, 21 Dec. 1987, pp. 2155-2157.
Wu et al, "High Critical Currents in Epitaxial YBaCuO Thin Films on Silicon With Buffer Layers", Appl. Phys. Lett., vol. 54, #8, 20 Feb. 1989, pp. 754-756.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Crane Sara W.
Sumitomo Electric Industries Ltd.
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