Superconducting device having a reduced thickness of oxide super

Details Superconducting device having a reduced thickness of oxide super Superconducting device having a reduced thickness of oxide super

1991-09-27

1995-04-18

Hille, Rolf

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

505220, 505234, 505701, 257 36, 257 39, H01L 3922, H01B 1200

Patent

active

054079039

ABSTRACT:
For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.

REFERENCES:
patent: 5126315 (1992-06-01), Nishino et al.
Wu et al., "High Critical Currents in Epitaxial YBaCuO Thin Films on Silicon with Buffer Layers", Appl. Phys. Lett., vol. 54, #8, 20 Feb. 1989, pp. 754-756.
Mizuno et al., "Fabrication of Thin-Film-Type Josephson Junctions Using a Bl-Sr-Ca-Cu-O/Bi-Sr-Cu-O/Bi-Sr-Ca-Cu-O Structure", Appl. Phys. Lett., vol. 56, #15, 9 Apr. 1990, pp. 1469-1471.

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