Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1992-03-02
1993-09-21
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 30, 257 31, 257 33, 257 34, 257 35, 257 36, 505 1, H01L 2900, H01L 3912, H01B 1200
Patent
active
052471896
ABSTRACT:
A tunnel junction type superconducting device includes a pair of superconductor electrodes formed of compound oxide superconductor material, and a metal layer of a high electric conductivity formed between the pair of superconductor electrodes so as to maintain the pair of superconductor electrodes separate from each other. The pair of superconductor electrodes is separated from each other by a distance within a range of 3 nm to 70 nm by action of the metal layer.
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Itozaki Hideo
Tanaka Saburo
Yazu Shuji
James Andrew J.
Martin Valencia M.
Sumitomo Electric Industries Ltd.
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