Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-01-30
1992-07-07
Weisstuch, Aaron
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
20419224, 505731, 505782, H01L 3924, C23C 1434
Patent
active
051283158
ABSTRACT:
The superconducting device according to the present invention is provided with a superconducting thin film of the Bi-Sr-Ca-Cu oxide deposited on a substrate thereof. Consequently, the device can be produced at a low cost because no rare earth elements are required.
The superconducting thin film according to the present invention is formed by sputtering onto a substrate from a Bi-Sr-Ca-Cu oxide target, followed by annealing in an oxidizing atmosphere. In this way, it is possible to produce a superconducting thin film of the Bi-Sr-Ca-Cu oxide in a simple way by using an ordinary sputtering apparatus. In this method, it is preferable that a MgO substrate be used and the optimum annealing temperature is about 880.degree. C.
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Kuwahara Hideki
Mizukami Atsuo
Nakao Masao
Yuasa Ryohkan
Sanyo Electric Co,. Ltd.
Weisstuch Aaron
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