Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1998-05-21
2000-11-14
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 36, H01L 2906
Patent
active
06147360&
ABSTRACT:
This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.
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patent: 5512151 (1996-04-01), Hayamizu et al.
patent: 5552374 (1996-09-01), Tanaka et al.
patent: 5627139 (1997-05-01), Chin et al.
Adachi Hideaki
Odagawa Akihiro
Setsune Kentaro
Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Wille Douglas A.
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