Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1994-01-21
1996-05-07
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 257 39, 505190, 505193, 505238, 427 62, 427 63, H01L 2906, H01B 1200, B05D 512
Patent
active
055148778
ABSTRACT:
A superconducting device or a super-FET has a pair of superconducting electrode regions (20b,20c) consisting of a thin film (20)oxide superconductor being deposited on a substrate (5) and a weak link region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a) these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.
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Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Saadat Mahshid
Sumitomo Electric Industries Ltd.
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