Superconducting device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

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257 37, 257 38, 257 39, 257663, H01L 3922

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active

054421969

ABSTRACT:
A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.
And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.

REFERENCES:
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patent: 4589001 (1986-05-01), Sakai et al.
patent: 4630081 (1986-12-01), Calviello
Journal of Electronic Engineering, vol. 22, No. 217, (Jan. 1985) p. 20.
R. C. Ruby et al., "Silicon Coupled Josephson Junctions and Super-Schottky Diodes with Coplanar Electrodes", IEEE Transaction on Electron Devices, vol. ED-28, No. 11 (Nov. 1981) pp. 1394-1397.
S. M. Faris et al., IBM Technical Disclosure Bulletin, vol. 24 No. 3 (Aug. 1981) pp. 1545-1546.
T. D. Clark et al., "Feasibility of Hybrid Josephson Field Effect Transistors", Journal of Applied Physics, vol. 51 (May 1980) pp. 2736-2743.

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