Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1991-11-25
1993-12-21
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 34, 257 38, 257 39, H01L 3922
Patent
active
052723585
ABSTRACT:
In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting electrodes, high impurity concentration regions are formed within the semiconductor so as to lie in contact with the superconducting electrodes and to extend to under ends of the control electrode.
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Hatano Mutsuko
Kawabe Ushio
Nishino Toshikazu
Crane Sara W.
Hitachi , Ltd.
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