Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-05-12
1999-10-05
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257197, 257616, H01L 29737
Patent
active
059628790
ABSTRACT:
The invention relates to a method for manufacturing a super self-aligned heterojunction bipolar transistor which is capable of miniaturizing an element, simplifying the process step thereof by employing a selective collector epitaxial growth process without using a trench for isolating between elements. According to the invention, isolation between elements is derived by using a mask defining an emitter region and a second spacer. The base layer has multi-layer structure being made of a Si, an undoped SiGe, a SiGe doped a p-type impurity in-situ and Si. Also, the selective epitaxial growth for a base is not required. Thus, it can be less prone to a flow of leakage current or an emitter-base-collector short effect.
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Prinz, et al., "The Effects of Base Dopant Outdiffusion and Undoped Si(1-x)Ge(x) Junction Spacer Layers in Si/Si(1-x)Ge(x)/Si Heterojunction Bipolar Transistors," IEEE Electron Device Letters, vol. 12, No. 2, Feb. 1991, pp. 42-44.
Sato et al., "Sub-20 ps ECL Circuits with High-Performance Super Self-Aligned Selectively Grown SiGe Base (SSSB) Bipolar Transistors," IEEE Trans. on Electron Devices, vol. 42, No. 3, Mar. 1995, pp. 483-487.
Cho Deok-Ho
Han Tae-Hyeon
Lee Soo-Min
Pyun Kwang-Eui
Ryum Byung-Ryul
Electronisc and Telecommunications Research Institute
Guay John
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