Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device
Reexamination Certificate
2007-11-13
2007-11-13
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
Reexamination Certificate
active
11191787
ABSTRACT:
Super lattice structures in conjunction with a tunnel junction to provide an improved contact for multiple components. The tunnel junctions can include a first semiconductor material having a resistance parameter for conducting a current and a second semiconductor material having a resistance parameter that is more restrictive to conduction of a current than the resistance parameter of the first semiconductor material. The first semiconductor material can have a critical thickness at which lattice matching of the first semiconductor material causes dislocation. The second semiconductor material can have a critical thickness at which lattice matching of the second semiconductor material causes dislocation that is thicker than the critical thickness of the first semiconductor material. The tunnel junction can be used in a monolithically manufactured photo transmitter and receiver design.
REFERENCES:
patent: 7016392 (2006-03-01), Tandon et al.
patent: 7136406 (2006-11-01), Ryou
Debray Jean-Philippe Michel
Guenter James K.
Finisar Corporation
Potter Roy
Workman Nydegger
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