Super lattice tunnel junctions

Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device

Reexamination Certificate

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Reexamination Certificate

active

11191787

ABSTRACT:
Super lattice structures in conjunction with a tunnel junction to provide an improved contact for multiple components. The tunnel junctions can include a first semiconductor material having a resistance parameter for conducting a current and a second semiconductor material having a resistance parameter that is more restrictive to conduction of a current than the resistance parameter of the first semiconductor material. The first semiconductor material can have a critical thickness at which lattice matching of the first semiconductor material causes dislocation. The second semiconductor material can have a critical thickness at which lattice matching of the second semiconductor material causes dislocation that is thicker than the critical thickness of the first semiconductor material. The tunnel junction can be used in a monolithically manufactured photo transmitter and receiver design.

REFERENCES:
patent: 7016392 (2006-03-01), Tandon et al.
patent: 7136406 (2006-11-01), Ryou

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