Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-11-02
1998-03-24
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 21, 257 22, H01L 2906, H01L 310328, H01L 310336
Patent
active
057315965
ABSTRACT:
A method of increasing the saturation threshold of a super lattice optical absorber, and a resulting super lattice optical absorber, involves decreasing the electrical resistance of the substrate adjacent the super lattice structure based on a series resistance model.
REFERENCES:
patent: Re32893 (1989-03-01), Miller
patent: 4546244 (1985-10-01), Miller
patent: 4582952 (1986-04-01), McNeely et al.
patent: 4665412 (1987-05-01), Ohkawa et al.
patent: 4720309 (1988-01-01), Deveaud et al.
patent: 4722879 (1988-02-01), Ueno et al.
patent: 4745452 (1988-05-01), Sollner
patent: 4806993 (1989-02-01), Voisin et al.
patent: 4827483 (1989-05-01), Fukuzawa et al.
patent: 5032710 (1991-07-01), Nojiri
patent: 5105301 (1992-04-01), Campi
patent: 5117477 (1992-05-01), Satoh
Applied Physics Letters, 20 Feb. 1989, U. S. A., vol. 54, No. 8, ISSN 0003-6951, pp. 748-750 XP000111739, G. LIVESCU et al., "High-Speed Absorption Recovery in Quantum Well Diodes by Diffusive Electrical Conduction."
Mendez et al., "Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field," Physical Review Letters, vol. 60, No. 23, 6 Jun. 1988, pp. 1-4.
Levine et al., "New 10.mu.m Infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices," Applied Physics Letters, 50(25), 20 Apr. 1987, pp. 1814-1816.
N.K Dutta, "Calculated absorption, emission, and gain in In.sub.0.72 Ga.sub.0.28 As.sub.0.6 P.sub.0.4 ",J. Appl. Phys. 51(12), Dec. 1980, pp. 6095-6100.
F. Devaux et al., "High-Frequency Operation of a Very Low Voltage, 1.55.mu.m Single-Mode Optical Waveguide Modulator Based on Wannier-Stark Localization", 8th International Conference on Integrated Optics and Optical Fibre Communication IOCC '91 -17th European Conference on Optical Communication ECOC '91, Paris, France, vol. 3, pp. 56-59 (Sep. 9-12, 1991).
Thomas H. Wood et al., "Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation," Appl. Phys. Lett. 57(11), 10 Sep. 1990, pp. 1081-1083.
Suzuki et al., "Effect of Hole Pile-Up at Heterointerface on Modulation Voltage in GaInAsP Electroabsorption Modulators," Electronics Letters, vol. 25, No. 2, 19th Jan. 1989, pp. 88-89.
Wood et al., "Increased Optical Saturation Intensities in GaInAs Multiple Quantum Wells by the Use of AlGaInAs Barriers," Electronics Letters, vol. 27, No. 3, 31st Jan. 1991, pp. 257-259.
Robert T. Bate, "the Quantum-Effect Device: Tomorrow's Transistor?",Scientific American, vol. 258 Mar. 1988, pp. 96-100.
H. Kano et al., "Negative Differential Resistance Device Built in A Biwell GaAs/AlGaAs Superlattice," Journal of Crystal Growth 81, (1987) pp. 144-148.
T. Nakagawa et al., "Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes," Appl. Phys. Lett. 51(8), 10 Aug. 1987, pp. 445-651.
D.D. Coon et al., "New Mode of IR Detection Using Quantum Wells," Appl. Phys. Lett. 45(6), 15 Sep. 1984, pp. 649-651.
D.D. Coon et al., "Narrow band infrared detection in multiquantum well structures," Appl. Phys. Lett. 47(3)1 Aug. 1985, pp. 289-291.
Elizabeth Corcoran, "Diminishing Dimensions," Scientific American, vol 263, Nov. 1990, cover page, pp. 122-131.
G.H Dohler, "Solid-State Superlattices",Scientific American, vol 249, No. 5, pp. 3, 144-151 and 198.
G. Hasnain et al., "Mid-infrared dectors in the 3-5 .mu.m band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structure," Applied Physics Letters 56(8), Dec. 19, 1990, pp. 770-772.
R.P. Leavitt et al., "Stark ladders in strongly coupled superlattices and their interactions with embedded quantum wells," Physical Review B, vol. 41, No. 8, 15 Mar. 1990, pp. 5174-5177.
B.F. Levine et al., "New 10.mu.m infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices," Applied Physics Letters 50(25), 20 Apr. 1987, pp. 1814-1816.
B.F. Levine et al., "High-detectivity D* =1.0.times.10.sup.10 cm Hz/WGaAs/AlGaAs multiquantum well.gtorsim.=8.3 .mu.m infrared detector," Applied Physics Letters 53(4), 25 Jul. 1988, pp. 296-298.
B.F. Levine et al., "High sensitivity low dark current 10.mu.m GaAs quantum well infrared photodetectors," Applied Physics Letters 56(9), Feb. 26, 1990, pp. 851-853.
E.E. Mendez et al., "Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field," Physical Review Letters,vol. 60, No. 23, 6 Jun. 1988, (4 pages).
H. Sakaki et al., "Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9 nm GaAs/0.9 nm AlGaAs) as barrier layers," Appl. Phys. Lett. 47(3), 1 Aug. 1985, pp. 295-297.
M. Sundaram et al., "New Quantum Structures," Science, vol. 254, 29 Nov. 1991, oo. 1326-1335.
J.A. Switzer et al., "Electrodeposited Ceramic Superlattices," Science, vol. 247, 26 Jan. 1990, pp. 444-445.
S.R. Eric Yang et al., "Theory of conductivity in superlattice minibands," Physical Review Bvol. 37, No. 17, 15 Jun. 1988, pp. 10090-10094.
Larry S. Yu et al., "A metal grating coupled bound-to-miniband transition GaAs multiquantum well/superlattice infrared detector," Appl. Phys. Lett. 59(11), 9 Sep. 1991, pp. 1332-1334.
Larry S. Yu et al., "Largely enhanced bound-to-miniband absorption in an InGaAs multiple quantum well with short-period superlattice InAlAs/InGaAs barrier," Appl. Phys. Lett. 59(21), 18 Nov. 1991, pp. 2712-2714.
L.C. West et al., "First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well," Appl. Phys. Lett. 46(12), 15 Jun. 1985, pp. 1156-1158.
Claude Weisbuch et al., "Quantum Semiconductor Structures," Fundamentals & Applications, Boston, Academic Press, 1991, pp. 19-20.
Mintel William
Telefonaktiebolaget LM Ericsson
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