Super hard-highly pure silicon nitrides, and a process and appar

Details Super hard-highly pure silicon nitrides, and a process and appar Super hard-highly pure silicon nitrides, and a process and appar

1978-07-21

1980-09-23

Bernstein, Hiram H.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

C10B 2106

Patent

active

042242967

ABSTRACT:
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.

REFERENCES:
patent: 3226194 (1965-12-01), Kuntz
Aboaf, J. Electrochem. Soc.: Solid State Science, vol. 116, #2, (Dec. 1966), pp. 1736-1740.
Brown, J. Electrochem. Soc.: Solid State Science, vol. 115, #3 (Mar. 1968), pp. 311-317.
Philipp, J. Electrochem. Soc.: Solid State Science Tech., vol. 120, #2 (feb. 1973), pp. 295-300.
Grieco, J. Electrochem. Soc.: Solid State Science, 115, #5 (Jan. 1969), pp. 525-531.
Whitner, Western Elec., Co., Inc. Tech Dig. #11, Jul. 1968, pp. 5-6.

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