Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-11-07
2006-11-07
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S011000, C257S012000, C257S013000, C257S023000, C257S051000, C257S079000, C257S094000, C257S097000, C257S183000, C257S201000, C257S746000, C257SE31033, C257SE31019, C257SE31026, C257SE31059, C257SE31064, C257SE31080, C257SE31069, C257S031000, C257SE31071, C257SE31072, C977S762000, C977S763000, C977S764000, C977S765000, C977S784000, C977S815000, C977S825000
Reexamination Certificate
active
07132677
ABSTRACT:
An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.
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Chung Kwan-Soo
Kang Tae-Won
Kim Hwa-Mok
Dongguk University
Fredrikson & Byron PA
Smith Zandra V.
Soward Ida M.
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