Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1993-01-26
1994-08-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257184, 257200, 372 43, 372 44, 372 45, H01L 3300
Patent
active
053410017
ABSTRACT:
Disclosed is a photo semiconductor material characterized in the blue to ultraviolet wavelength region. The semiconductor is firmed by lattice matching a sulfide-selenide manganese-zinc epitaxial mixed crystal film to the substrate. A blue laser diode is fabricated by forming a double hereto quantum well structure on a substrate by using sulfide-selenide manganese-zinc mixed crystal films as clad layers. A zinc molecular beam, a manganese molecular beam, a sulfur molecular beam, and a selenium molecular beam are simultaneously emitted onto a GaAs substrate in an ultrahigh vacuum, and a mixed crystal of Zn.sub.1-x Mn.sub.x S.sub.y Se.sub.1-y (0<x<1, 0<y<1) is obtained. In particular, the molecular beam pressure is adjusted so as to lattice matched to the substrate. As the material for the substrate, for example, GaAs and ZnSe may be used. Moreover, on an n-type GaAs single crystal substrate, a 2 .mu.m thick chlorine doped n-type Zn.sub.0.8 Mn.sub.0.2 S.sub.0.2 Se.sub.0.8 a layer, a 50 nanometer thick ZnSe active layer, and a 1 .mu.m thick nitrogen doped p-type Zn.sub.0.8 Mn.sub.0.2 S.sub.0.2 Se.sub.0.8 layer are formed. An Au electrode layer and an In electrode layer are formed at both sides of this structure, and an optical resonator by cleavage mirror is formed. This laser diode emits coherent light in the blue light spection at room temperature in the pulse current injection condition.
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Hayashi Shigeo
Mitsuyu Tsuneo
Okawa Kazuhiro
Matsushita Electric - Industrial Co., Ltd.
Mintel William
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