Sulfide encapsulation passivation technique

Details Sulfide encapsulation passivation technique Sulfide encapsulation passivation technique

2005-08-02

2005-08-02

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Forming schottky junction

C438S572000, C438S092000

Reexamination Certificate

active

06924218

ABSTRACT:
A method for passivating a III-V material Schottky layer of a field effect transistor. The transistor has a gate electrode in Schottky contact with a gate electrode contact region of the Schottky layer. The gate electrode is adapted to control a flow of carriers between a source electrode of the transistor and a drain electrode of such tarnsistor. The transistor has exposed surface portions of the Schottky layer beween the source electrode and the drain electrode adjacent to the gate electrode contact region of the Schottky layer. The method includes removing organic contamination from the exposed surface portions of the Schottky layer using a oxygen plasma. The contamination removed surface portions of the Schottky layer are exposed to a solution of ammonium sulfide and NH4OH. After removal of the solution, the exposed regions are dried in a nitrogen enviroment. A layer of passivating material is deposited over the dried surface portions.

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