Successive dry etching of alternating laminate

Details Successive dry etching of alternating laminate Successive dry etching of alternating laminate

1997-05-30

1998-11-03

Caldarola, Glenn

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, 438713, 438719, 438723, 216 68, 216 70, 216 79, H01L 2100, B44C 122, C23F 100, C23F 300

Patent

active

058308075

ABSTRACT:
A laminated structure formed by alternately laminating a silicon film and a silicon oxide film is successively etched in the same chamber. Two groups are selected from groups A, B, and C, the group A including NF.sub.3, CF.sub.4, and SF.sub.6, the group B including CO, CHF.sub.3, CH.sub.2 F.sub.2, C.sub.2 F.sub.6, C.sub.3 F.sub.8, and C.sub.4 F.sub.8, and the group C including Cl.sub.2, HBr, HCl and Br.sub.2. The laminated structure is etched by successively etching one of the silicon film and the silicon oxide film by a combination of gases having a first mixture ratio and the other by the combination of gases having a second mixture ratio different from the first mixture ratio, the combination of gases including at least one kind of gas selected from one group of the selected two groups and at least one kind of gas selected from the other group. A technology of manufacturing a semiconductor device is provided which can etch an alternate laminate efficiently with a simple system.

REFERENCES:
patent: 4162185 (1979-07-01), Coburn et al.
patent: 4180432 (1979-12-01), Clark
patent: 4377436 (1983-03-01), Donnelly et al.
patent: 4615764 (1986-10-01), Bobbio et al.
patent: 5013398 (1991-05-01), Long et al.
patent: 5505816 (1996-04-01), Barnes et al.
patent: 5620526 (1997-04-01), Watatani et al.

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