Subthreshold MOS circuits for correlating analog input voltages

Details Subthreshold MOS circuits for correlating analog input voltages Subthreshold MOS circuits for correlating analog input voltages

1990-10-02

1992-03-24

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307490, 364819, H03B 1900

Patent

active

050991566

ABSTRACT:
A first and a second MOS transistor of the same conductivity type are connected in series between a load and a fixed voltage source. The gates of the first and second MOS transistors are connected to sources of input voltage which are of a magnitude smaller than the threshold voltages of the two MOS transistors. The first MOS transistor located next to the load is kept in saturation. A related circuit includes a first and a second MOS transistor of the same conductivity type are connected in series between a load and a fixed voltage source. The first MOS transistor located next to the load is kept in saturation. The gates of the first and second MOS transistors are connected to the gates of third and fourth diode-connected MOS transistors of the same conductivity type as the first and second MOS transistors. The third MOS transistor is connected between a first input current node and fixed voltage source. The fourth MOS transistor is connected between a second input current node and a fixed voltage source. The third an fourth MOS transistors may alternatively be connected to first and second input transistors and a bias transistor arranged as in a differential amplifier.

REFERENCES:
patent: 3772536 (1973-11-01), Grannis et al.
patent: 3839646 (1974-10-01), Soloway
patent: 4345172 (1982-08-01), Kobayashi et al.
patent: 4503341 (1985-03-01), Shah
patent: 4739195 (1988-04-01), Masaki et al.
patent: 4941027 (1990-07-01), Beasom
patent: 4950917 (1990-08-01), Holler et al.
patent: 5027009 (1991-06-01), Urakawa et al.

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