Subsurface zener diode and method of making

Details Subsurface zener diode and method of making Subsurface zener diode and method of making

1987-04-14

1988-05-03

Ozaki, George T.

Fishing, trapping, and vermin destroying

357 13, 437154, 437157, 437904, H01L 21383

Patent

active

047420219

ABSTRACT:
A subsurface zener diode is formed in an N.sup.- epitaxial region formed on a P type substrate. The N.sup.- epitaxial region is isolated by a P.sup.+ isolation region. An N.sup.+ buried layer region is disposed between a portion of the N.sup.- epitaxial region and the P type substrate. A first P.sup.+ region is formed in the middle of the N.sup.- epitaxial region at the same time as the P.sup.+ isolation regions. Second and third adjacent P.sup.+ regions also are formed in the N.sup.- epitaxial region adjacent to and slightly overlapping the first P.sup.+ region, all three P.sup.+ regions terminating at the N.sup.+ buried layer. An N.sup.+ region, formed during an emitter diffusion operation, has first and second opposed edges centered within the overlapping portions of the first, second, and third P.sup.+ regions. Two other opposed edges of the N.sup.+ region extend beyond the other edges of the first P.sup.+ region, forming N.sup.+ N.sup.- contacts to the N.sup.+ epitaxial region, enabling it to be reverse biased without an additional N.sup.+ contact region and a corresponding metal conductor. Masking alignment tolerances in the direction of the N.sup.+ N.sup.- overlap are eased, increasing overall processing yields.

REFERENCES:
patent: 3881179 (1975-04-01), Howard, Jr.
patent: 4099998 (1978-07-01), Ferro et al.
patent: 4119440 (1978-10-01), Hile
patent: 4127859 (1978-11-01), Nelson
patent: 4155777 (1979-05-01), Dunkley et al.
patent: 4177095 (1979-12-01), Nelson
patent: 4213806 (1980-07-01), Tsang
patent: 4473941 (1984-10-01), Turi et al.
patent: 4683483 (1987-07-01), Burnham et al.

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