Substrates for the growth of 3C-silicon carbide

Details Substrates for the growth of 3C-silicon carbide Substrates for the growth of 3C-silicon carbide

1993-06-25

1996-02-20

Turner, Archene

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

428446, 428697, 428698, 428699, 428704, B32B 1504

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active

054927528

ABSTRACT:
A substrate for the growth of monocrystalline .beta.-SiC is formed by providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane and growing a body of monocrystalline cubic material on the surface to provide a planar cubic material surface that is without grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic material, for example TiC, ZrC, HfC, or TiN, has a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC. Monocrystalline .beta.-SiC can be nucleated and grown on the surface of the cubic material.

REFERENCES:
patent: 4639028 (1987-01-01), Olson
patent: 4738937 (1988-04-01), Parsons
patent: 4767666 (1988-08-01), Bunshah et al.
patent: 4912063 (1990-03-01), Davis et al.
patent: 4923716 (1990-05-01), Brown et al.
patent: 4946547 (1990-08-01), Palmour et al.
patent: 5043773 (1991-08-01), Precht et al.
patent: 5184199 (1993-02-01), Fujii et al.

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