Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-02-08
2005-02-08
Clark, S. V. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S784000, C257S612000
Reexamination Certificate
active
06853084
ABSTRACT:
The present invention discloses a substrate within a Ni/Au structure electroplated on electrical contact pads and a method for fabricating the same. The method comprises: providing a substrate with a circuit layout pattern and forming a conducting film on the surface of the substrate; depositing a first photoresist layer within an opening on said electrical conducting film surface to expose a portion of said circuit layout pattern to be electrical contact pads; removing the exposed conducting film uncovered by the first photoresist layer; depositing a second photoresist layer, covering the conducting film exposed in the openings of the first photoresist layer; electroplating Ni/Au covering the surface of the electrical contact pads; removing the first and second photoresists, and the conducting film covered by the photoresists; depositing solder mask on the substrate within an opening to expose said electrical contact pads. It improves the electrical coupling between gold wires and the electrical contact pads of the substrate, prevents the electrical contact pads from oxidation, and insurances the electrical interconnection performance.
REFERENCES:
patent: 6369451 (2002-04-01), Lin
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6576540 (2003-06-01), Chen et al.
patent: 6586843 (2003-07-01), Sterrett et al.
patent: 6610601 (2003-08-01), Li et al.
Chen Chiang-Du
Hsu Shih-Ping
Liu Yen-Hung
Clark S. V.
Phoenix Precision Technology
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