Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2004-03-05
2008-11-11
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S233000, C257S445000, C257S448000, C257SE27151, C438S075000, C438S078000, C438S079000
Reexamination Certificate
active
07449732
ABSTRACT:
The substrate with electrodes is formed of a transparent material onto which is deposited a film (1) of a transparent conductive material of thickness e1and of refractive index n1, said film being structured to form a set of electrodes (1a) whose contours (8) delimit insulating spaces (3), wherein the insulating spaces (3) are filled with a transparent dielectric material of thickness e2and of refractive index n2so that the respective thicknesses of the conductive material and the dielectric material are inversely proportional to the values of the refractive indices of said materials and said dielectric material forms neither depressions nor beads at the contour (8) of the electrodes. A hardcoating layer (7) may be disposed between the substrate (5) and the electrodes and a protective film (9) added.The substrate with electrodes is obtained by UV irradiation through a single mask.
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Partial European Search Report for corresponding European Application, in French, completed Nov. 10, 2003, by M. Baldan, at La Haye.
Partial European Search Report for corresponding European Application, in English, completed Nov. 10, 2003, by M. Baldan, at The Hague.
Wagner, E., STI, Micro-engineering 2003, EPFL: Lausanne.
Baroni Pierre-Yves
Grupp Joachim
Hoffmann Patrik
Poli Gian-Carlo
Wagner Estelle
Asulab S.A.
Chiu Tsz K
Griffin & Szipl, P.C.
Smith Zandra V.
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