Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2001-07-31
2003-04-29
Powell, William A. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C216S002000, C216S027000, C438S739000, C438S740000
Reexamination Certificate
active
06555480
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to substrates with fluidic channels and methods for manufacturing.
BACKGROUND OF THE INVENTION
In some fluid ejection devices, such as printheads, fluid is routed to an ejection chamber through a slot in the substrate. Often, slots are formed in a wafer by wet chemical etching with, for example, alkaline etchants. Such etching techniques result in etch angles that cause a very wide backside slot opening. The wide backside opening limits how small a particular die on the wafer could be and therefore limits the number of die per wafer (the separation ratio). It is desired to maximize the separation ratio.
SUMMARY
In one embodiment, a method of manufacturing a fluidic channel through a substrate includes etching an exposed section on a first surface of the substrate, and coating the etched section of the substrate. The etching and the coating are alternatingly repeated until the fluidic channel is formed.
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Emery Timothy R
Koch Tim R
Lai Diane W
Milligan Donald J
Smith J. Daniel
Hewlett--Packard Development Company, L.P.
Powell William A.
Price Lucinda G.
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